v rrm = 20 v - 100 v i f = 200 a features ? high surge capability three tower package ? types up to 100 v v rrm ? isolation type package parameter symbol MBRT20045 (r) mbrt20060 (r) unit re p etitive p eak reverse volta g e v rrm 45 60 v conditions 100 MBRT20045 thru mbrt200100r mbrt200100 (r) 80 mbrt20080 (r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) silicon power schottk y diode pp g rms reverse voltage v rms 32 42 v dc blocking voltage v dc 45 60 v continuous forward current i f 200 200 a operating temperature t j -40 to 150 -40 to 150 c storage temperature t stg -40 to 175 -40 to 175 c parameter symbol MBRT20045 (r) mbrt20060(r) unit diode forward voltage 0.75 0.8 11 20 20 thermal characteristics thermal resistance, junction - case r thjc 0.18 0.18 c/w -40 to 150 -40 to 150 t c = 25 c, t p = 8.3 m s 70 100 80 -40 to 175 mbrt200100 (r) 11 mbrt20080 (r) 0.18 v r = 20 v, t j = 125 c 0.18 0.88 0.88 20 ma v v r = 20 v, t j = 25 c i f = 100 a, t j = 25 c t c 125 c conditions 57 1500 1500 -40 to 175 200 200 1500 electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm reverse current i r v f 20 a 1500 www.genesicsemi.com 1
MBRT20045 thru mbrt200100r www.genesicsemi.com 2
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